Samuel Greengard
Abstract
Advances in materials science and chemistry are leading to self-destructing circuits and transient electronics, which could impact many fields.
- Gund, V., Ruyack, A., Camera, K., Ardanuc, S., Ober, C., and Lal, A. (2015). Multi-modal graphene polymer interface characterization platform for vaporizable electronics. 2015. 873-876. 10.1109/ MEMSYS.2015.7051098. https://www.researchgate.net/publication/283633594_Multi-modal_graphene_polymer_interface_characterization_platform_for_vaporizable_electronicsGoogle Scholar
- Gund, V., Ruyack, A., Camera, K., Ardanuc, S., Ober, C., and Lal, A. (2016). Transient Micropackets for Silicon Dioxide and Polymer-Based Vaporizable Electronics. 1153-1156. 10.1109/MEMSYS.2016.7421840. https://www.researchgate.net/publication/301709792_Transient_micropackets_for_silicon_dioxide_and_polymer-based_vaporizable_electronics.Google Scholar
- Chang, J., Fang, H., Bower, C.A., Song E., Yu, X., and Rogers, J.A. Materials and processing approaches for foundry-compatible transient electronics. Proceedings of the National Academy of Sciences Jul 2017, 114 (28) E5522-E5529; http://www.pnas.org/content/114/28/E5522Google ScholarCross Ref
- Gao, Y., Zhang, Y., Wang, X., Sim, K., Liu, J., Chen, J., Feng, X., Xu, H., and Yu, C. Moisture-triggered physically transient electronics. Science Advances, Sept. 1, 2017: Vol. 3, no. 9, e1701222 http://advances.sciencemag.org/content/3/9/e1701222.full.Google Scholar
Index Terms
- Transient electronics take shape
Recommendations
Carbon nanotube electronics
Presents experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, ...
Fin shape dependent variability for strained SOI FinFETs
In this paper, for the first time impact of fin shape variation on 22-nm technology node strained silicon-on-insulator (SSOI) n-FinFET has been examined. With 3D-TCAD simulator, the electrical characteristics are analyzed and compared for devices with ...
3D numerical simulations of single-event transient effects in SOI FinFETs
The characteristics and mechanism of single-event transients in silicon-on-insulator (SOI) fin field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided design (TCAD) simulations based on the bipolar amplification ...
Comments