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Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a promising candidate for future on-chip memory, owing to its high-density, zero-leakage and energy efficiency. In a conventional STT-MRAM cache write operations consume larger energy as ...

Existing studies have uncovered that there exist significant Raw Bit Error Rates (RBERs) variations among different layers of 3D flash memories due to manufacture process variation. These RBER variations would cause significantly diversed read latencies ...

This paper describes a write-once-memory-code phase change memory (WOM-code PCM) architecture for next-generation non-volatile memory applications. Specifically, we address the long latency of the write operation in PCM—attributed to PCM SET—...