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A high speed and leakage-tolerant domino logic for high fan-in gates

Published:17 April 2005Publication History

ABSTRACT

Robustness of high fan-in domino circuits is degraded by technology scaling due to exponential increase in leakage. In this paper, we propose a new domino circuit for high fan-in and high-speed applications in ultra deep submicron technologies. The proposed circuit employs a footer transistor that is initially OFF in the evaluation phase to reduce leakage and then turned ON to complete the evaluation. According to simulations in a predictive 70nm process, the proposed circuit increases noise immunity by more than 26X for wide OR gates and shows performance improvement of up to 20% compared to conventional domino logic circuits. The proposed circuit reduces the contention between keeper transistor and NMOS evaluation transistors at the beginning of evaluation phase. This results in less power dissipation for the proposed technique.

References

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    • Published in

      cover image ACM Conferences
      GLSVLSI '05: Proceedings of the 15th ACM Great Lakes symposium on VLSI
      April 2005
      518 pages
      ISBN:1595930574
      DOI:10.1145/1057661
      • General Chair:
      • John Lach,
      • Program Chairs:
      • Gang Qu,
      • Yehea Ismail

      Copyright © 2005 ACM

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      Association for Computing Machinery

      New York, NY, United States

      Publication History

      • Published: 17 April 2005

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