A. E. Youtz
Index Terms
- Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs
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Properties of ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy
ZrO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy (MOMBE). Zirconium t-butoxide, Zr(O-t-C4H9)4 was used as a Zr precursor because of its moderate vapor pressure. The properties of the layers were evaluated ...
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
Interfacial chemical analyses and electrical characterization of in situ atomic layer deposited (ALD) Al"2O"3 on freshly molecular beam epitaxy (MBE) grown n- and p- GaAs (001) with a (4x6) surface reconstruction are performed. The capacitance-voltage (...
Microstructure and characteristics of the HfO2 dielectric layers grown by metalorganic molecular beam epitaxy
HfO2 dielectric layers were grown on the p-type Si (100) by metalorganic molecular beam epitaxy. Hafnium tetrabutoxide, Hf(Oċt-C4H9)4 was used as a Hf precursor for its moderate vapor pressure. The properties of the layers were evaluated by X-ray ...
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