Peyman Nazari
ABSTRACT
A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.
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- Ruonan Han and E. Afshari. A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy. 48, 12 (????), 3090--3104. Google ScholarCross Ref
- R. Han, C. Jiang, A. Mostajeran, M. Emadi, H. Aghasi, H. Sherry, A. Cathelin, and E. Afshari. 25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems. In 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers (2015--02). 1--3. Google ScholarCross Ref
- C. Jiang, A. Mostajeran, R. Han, M. Emadi, H. Sherry, A. Cathelin, and E. Afshari. 2016. A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS. IEEE Journal of Solid-State Circuits 51, 11 (Nov 2016), 2596--2609. Google ScholarCross Ref
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- P. Nazari, S. Jafarlou, and P. Heydari. 2017. A fundamental-frequency 114GHz circular-polarized radiating element with 14dBm EIRP, -99.3dBc/Hz phase-noise at 1MHz offset and 3.7% peak efficiency. In 2017 IEEE International Solid-State Circuits Conference (ISSCC). 322--323. Google ScholarCross Ref
- P. Nazari, H. Mohammadnezhad, E. Preisler, and P. Heydari. 2015. A broadband nonlinear lumped model for silicon IMPATT diodes. In 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. 145--148. Google ScholarCross Ref
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- Z. Wang, P. Y. Chiang, P. Nazari, C. C. Wang, Z. Chen, and P. Heydari. 2014. A CMOS 210-GHz Fundamental Transceiver With OOK Modulation. IEEE Journal of Solid-State Circuits 49, 3 (March 2014), 564--580. Google ScholarCross Ref
- Z. Wang, P. Nazari, and P. Heydari. 2015. Bottom-feed on-chip waveguide slot antenna for THz applications. In 2015 IEEE International Symposium on Antennas and Propagation USNC/URSI National Radio Science Meeting. 1458--1459. Google ScholarCross Ref
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