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In-situ power monitoring scheme and its application in dynamic voltage and threshold scaling for digital CMOS integrated circuits

Published:18 August 2010Publication History

ABSTRACT

An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.

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    • Published in

      cover image ACM Conferences
      ISLPED '10: Proceedings of the 16th ACM/IEEE international symposium on Low power electronics and design
      August 2010
      458 pages
      ISBN:9781450301466
      DOI:10.1145/1840845

      Copyright © 2010 ACM

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      Publication History

      • Published: 18 August 2010

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