Saibal Mukhopadhyay
ABSTRACT
In this paper we model (numerically and analytically) and analyze sub-threshold, gate-to-channel tunneling, and edge direct tunneling leakage in Double Gate (DG) devices. We compare the leakage of different DG structures, namely, doped body symmetric device with polysilicon gates, intrinsic body symmetric device with metal gates and intrinsic body asymmetric device with different front and back gate material. It is observed that, use of (near-mid-gap) metal gate and intrinsic body devices significantly reduces both the total leakage and its sensitivity to parametric variations in DG circuits
- E. Nowak, et. al, "Turning silicon on its edge", IEEE Circuits & Device Magazine, Jan/Feb 2004, pp. 20--31.Google Scholar
Cross Ref
- MEDICI: 2-D device simulation program, Synopsys Inc.Google Scholar
- Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, New York: Cambridge Univ. Press, 1998. Google ScholarDigital Library
- Y. Taur, "Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs", IEEE TED, vol. 48, Dec. 2001, pp. 2861--2869Google ScholarCross Ref
- G. Baccarani, "A Compact Double-Gate MOSFET Model Comprising Quantum-Mechanical and Nonstatic Effects," IEEE TED, vol. 49, Aug. 1999, pp-1656--1666.Google ScholarCross Ref
- Q. Chen, Nanoscale metal-oxide-semiconductor field-effect transistor: scaling limits and opportunities," Nanotechology, vol. 15, Oct. 2004, pp-S545--S555.Google Scholar
- K. Kim, et. al., "Process/physics-based threshold voltage model for nano-scaled double-gate devices", International Journal of Electronics, vol. 91, Mar. 2004, pp. 139--148.Google ScholarCross Ref
- L. Chang, et. al., "Direct tunneling gate leakage current in double-gate and ultrathin body MOSFETs", IEEE TED, vol. 49, Dec. 2002, pp. 2288--2295.Google ScholarCross Ref
- L. F. Register, et. al., "Analytic model for direct tunneling current in polycrystalline silicon-gate meta-oxide-semiconductor devices", Applied Physics Letter, vol. 74, Jan. 1999, pp. 457--459.Google ScholarCross Ref
- K. Yang, et.al, "Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs,", IEEE TED, vol. 48, June. 2001, pp-1159--64.Google ScholarCross Ref
- S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge Unversity Press, Cambridge, 1995.Google Scholar
- SCHRED {Online}. Available: http://nanohub.purdue.edu/.Google Scholar
- S. Mudanai, et.al, "Modeling of direct tunneling current through gate dielectric stacks," IEEE TED, vol. 47, Oct. 2000, pp-1851--57Google ScholarCross Ref
- S. Narendra, et.al. "Scaling of stack effect and its application for leakage reduction," ISLPED, 2001, pp. 195--200. Google ScholarDigital Library
- S. Mukhopadhyay, et.al, "Accurate modeling of transistor stacks to effectively reduce total standby leakage in nano-scale CMOS circuits", Symp. of VLSI Circuits, 2003, pp. 53--56.Google ScholarCross Ref
Index Terms
- Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits
Recommendations
Modeling and Analysis of Leakage Currents in Double-Gate Technologies
This paper models and analyzes subthreshold and gate leakage currents in different double-gate (DG) devices, namely, a doped body symmetric device with polysilicon gates, an intrinsic body symmetric device with metal gates, and an intrinsic body ...
Modeling and analysis of loading effect on leakage of nanoscaled bulk-CMOS logic circuits
In nanoscale complementary metal-oxide-semiconductor (CMOS) devices, a significant increase in subthreshold, gate, and reverse-biased junction band-to-band-tunneling (BTBT) leakage results in large leakage power in logic circuits. Leakage components ...
Accurate estimation of total leakage in nanometer-scale bulk CMOS circuits based on device geometry and doping profile
Dramatic increase of subthreshold, gate and reverse biased junction band-to-band-tunneling (BTBT) leakage in scaled devices results in the drastic increase of total leakage power in a logic circuit. In this paper, a methodology for accurate estimation ...
Comments